Developmenthistory
Inthe1920s,someinventorstriedtomasterthemethodofcontrollingthecurrentinsolid-statediodes,andtheirideaswererealizedinbipolartransistorslater.However,theirvisionwasnotrealizeduntiltheendoftheSecondWorldWar.Duringthewar,peoplefocusedtheirenergyonmanufacturingmilitaryproductssuchasradar.Therefore,thedevelopmentoftheelectronicsindustrywasnotasrapidasafterwards,butpeople’sunderstandingofsemiconductorphysicshasgraduallyincreasedandthelevelofmanufacturingtechnologyhasgraduallyimproved.Afterthewar,manyscientistsresumedresearchonsolid-stateelectronicdevices.In1947,thefamousBellLabssuccessfullydevelopedatransistor.Sincethen,theresearchdirectionofelectronicshasshiftedfromvacuumtubestosolid-stateelectronicdevices.
Atthetime,thetransistorseemedtohavethecharacteristicsofsmallsizeandhighefficiency.Inthe1950s,someelectronicengineershopedtodevelopmoreadvancedandcomplexcircuitsbasedontransistors.However,withtheincreaseincircuitcomplexity,theimpactoftechnicalissuesondeviceperformancehasgraduallyattractedpeople'sattention.
Complexcircuitslikecomputermotherboardsoftenhavehigherrequirementsforresponsespeed.Ifthecomponentsofthecomputeraretoolarge,orthewiresbetweendifferentcomponentsaretoolong,electricalsignalscannotpropagatefastenoughinthecircuit,whichwillcausethecomputertoworkslowly,lowefficiency,andevencauselogicerrors.
In1958,JackKilbyofTexasInstrumentsfoundasolutiontotheaboveproblems.Heproposedthatallcomponentsandchipsinthecircuitcanbemadeofthesameblockofsemiconductormaterial.Hiscolleagueswereonvacationatthetime.Aftertheyfinishedtheirvacation,Kilbyimmediatelyshowedhisnewdesign.Subsequently,hedevelopedatestversionofthisnewcircuit.InSeptember1958,thefirstintegratedcircuitwassuccessfullydeveloped.Althoughthisintegratedcircuitlooksveryroughandhassomeproblems,theintegratedcircuitisindeedaninnovativeconceptinthehistoryofelectronics.Byintegratingallthecomponentsonthesamematerialblockandconnectingthevariouspartsthroughtheuppermetallizationlayer,separateindependentcomponentsarenolongerneeded,thusavoidingthestepsofmanuallyassemblingcomponentsandwires.Inaddition,thefeaturesizeofthecircuitisgreatlyreduced.Withthegradualdevelopmentofelectronicdesignautomation,manyprocessesinthemanufacturingprocesscanbeautomatedandcontrolled.Sincethen,theideaofintegratingallcomponentsonasinglesiliconchiphasbeenrealized.TheeraofSmallScaleIntegration(SSI)beganintheearly1960sandthenwentthroughMediumScaleIntegration(MSI,1960).Late),large-scaleintegratedcircuitsandverylarge-scaleintegratedcircuits(early1980).ThenumberofVLSItransistorscanreach10,000.
Classification
Integratedcircuitscanbedividedintosmall-scaleintegratedcircuits,medium-scaleintegratedcircuits,large-scaleintegratedcircuits,verylarge-scaleintegratedcircuits,andverylarge-scaleintegratedcircuitsaccordingtothelevelofintegration.Andhuge-scaleintegratedcircuits.
Small-scaleintegratedcircuitsappearedin1960,containing10-100elementsor1-10logicgatesonasiliconchip.Suchaslogicgatesandflip-flops.Ifasmall-scaledigitalintegratedcircuit(SSI)isusedtodesignacombinationallogiccircuit,thegatecircuitisusedasthebasicunitofthecircuit,sothesimplificationofthelogicfunctionshouldminimizethenumberofgatecircuitsused,andthenumberofgateinputsisalsoleast.
MediumScaleIntegration(MSI)
Appearedin1966,itcontains100-1000componentsor10-100logicgatesonasiliconchip.Suchas:integratedtimers,registers,decoders,etc.
Ifyouchooseamedium-scaleintegratedcircuit(MSI)todesignacombinationallogiccircuit,thenumberofintegratedcircuitsusedistheleast,thevarietyistheleast,andtheconnectionsbetweentheintegratedcircuitsarealsotheleast.Thisoftenneedstotransformthelogicalfunctionexpressionintotheexpressionformrequiredbytheselectioncircuit,andsometimesthestandardparadigmcanbeuseddirectly.
AlthoughMSImedium-scalecombinationallogicdeviceshavestrongerfunctionsthansmall-scaleintegratedcircuitsSSI,theyarenotasspecializedaslarge-scaleintegratedcircuitsLSI.Althoughtherearemanytypesofthesedeviceproducts,theyarenotItmayfullymeettheuser'srequirements,whichrequiresmultiplechipstobecascadedtoexpanditsfunctions,andsomestandardmedium-scaleinheritedcomponentscanbeusedtoimplementothercombinatoriallogiccircuitdesigns.Whenusingmedium-scaleintegratedcomponentsforcombinatoriallogiccircuitdesign,themethodistoselectasuitableMSI,andthentransformthelogicalexpressionaftertheactualproblemistransformedintotheexpressionformoftheresponseMSI.Comparedwiththecombinationallogiccircuitdesignedwithgatecircuit,thecombinationallogiccircuitdesignedwithMSIisnotonlysmallinsizeandlighterinweight,butalsoimprovesthereliabilityofwork.
Thecascadefromtheselectionofmedium-scaledatacanexpandthenumberofwaysofselectingdata,anditsfunctionexpansioncanbeusednotonlyforcombinationallogiccircuits,butalsoforsequentiallogiccircuits.Incombinationallogiccircuits,therearemainlythefollowingapplications:
(1)Cascadeexpansiontoincreasethenumberofselectedchannelsandbits,whichcanrealizedatatransmissionfrommultiplebitstomultiplebits;
(2)Asalogicfunctiongeneratortorealizethedesignofanycombinationallogiccircuit.
LargeScaleIntegratedCircuits(LSI)
Appearedin1970,containing103-105componentsor100-10,000logicgatesonasiliconchip.Suchas:semiconductormemory,somecomputerperipherals.628512,628128(128K)Themaximumcapacityis1G.
VeryLargeScaleIntegratedCircuits(VLSI)
Integratedcircuitswithmorethan100,000componentsormorethan10,000gatecircuitsonachip,CalledVLSI.Verylargescaleintegratedcircuitsweresuccessfullydevelopedinthelate1970sandaremainlyusedtomanufacturememoriesandmicroprocessors.The64k-bitrandomaccessmemoryisthefirstgenerationofverylarge-scaleintegratedcircuits,whichcontainsapproximately150,000componentsandhasalinewidthof3microns.
TheintegrationlevelofVLSIhasreached6milliontransistors,andthelinewidthhasreached0.3microns.Electronicequipmentmanufacturedwithverylargescaleintegratedcircuitshassmallsize,lightweight,lowpowerconsumptionandhighreliability.UsingVLSItechnology,anelectronicsub-systemandeventheentireelectronicsystemcanbe"integrated"onachiptocompletevariousfunctionssuchasinformationcollection,processing,andstorage.Forexample,theentire386microprocessorcircuitcanbeintegratedonachipwithanintegrationlevelof2.5milliontransistors.Thesuccessfuldevelopmentofverylarge-scaleintegratedcircuitsisaleapinmicroelectronicstechnology,whichhasgreatlypromotedtheprogressofelectronictechnology,therebydrivingthedevelopmentofmilitarytechnologyandciviliantechnology.Verylargescaleintegratedcircuitshavebecomeanimportantindicatortomeasurethelevelofacountry'sscientific,technologicalandindustrialdevelopment,anditisalsoanareawherethecompetitionismostintenseintheworld'smajorindustrialcountries,especiallytheUnitedStatesandJapan.
UltraLarge-ScaleIntegration(ULSI)
In1993,withthesuccessfuldevelopmentof16MFLASHand256MDRAMintegratedwith10milliontransistors,itenteredtheultra-largescaleintegratedcircuit.ULSI(UltraLarge-ScaleIntegration)era.Thenumberofintegratedcomponentsofverylargescaleintegratedcircuitsisbetween107and109.
TherapidgrowthofULSIcircuitintegrationmainlydependsonthefollowingtwofactors:oneisthatthecrystalgrowthtechnologyhasreachedaveryhighlevel;theotheristhecontinuousimprovementofmanufacturingequipment,theprocessingaccuracy,automationandreliabilityTheimprovementhasbroughtthedevicesizeintothedeepsub-micronrange.Thesiliconsinglecrystalpreparationtechnologycanmaketheradialparametersofthecrystaluniform,reducethemicro-defectsinthebody,andtheaveragedefectsizeof0.1~0.3umcanbelessthan0.05/cm2.Acompleteunderstandingofthetheoreticalmodelofdefectsinducedduringcircuitprocessinghasalsobeendeveloped,andacompletesetofcrystalprocessingtechnologyhasbeendeveloped.Thecontinuousincreaseinthediameterofsiliconwafersusedintheproductionofcircuitshasledtoasubstantialincreaseinproductionefficiency,andthediameterofsiliconwafershasreached12inches.Thereductionofmicro-defectsincreasesthechipyield.Asiliconchipwith0.02defectspersquarecentimetercanmaketheyieldof256MBDRAMreach80~90%.
GigaScaleIntegration(GSI)
In1994,duetothesuccessfuldevelopmentof1GDRAMintegrating100millioncomponents,itenteredthegiganticscaleintegratedcircuitGSI(GigaScaleIntegration).)era.Thenumberofintegratedcomponentsofahuge-scaleintegratedcircuitismorethan109.
Developmentstatus
Asoflate2012,billionsoftransistorprocessorshavebeencommerciallyavailable.Asthesemiconductormanufacturingprocessjumpsfromthe32-nanometerleveltothenext22-nanometerlevel,thistypeofintegratedcircuitwillbecomemorecommon,althoughitwillencounterchallengessuchasprocessangledeviations.Anotableexampleisthegraphicsprocessorcode-named‘GK110’,thefirstdisplaycoreofNvidia’sGeForce700series,whichusesall7.1billiontransistorstoprocessdigitallogic.AndmostofItanium'stransistorsareusedtoformits32-megabytethree-levelcache.ThechipintegrationleveloftheIntelCorei7processorhasreached1.4billiontransistors.Thedifferencebetweentheadopteddesignandtheearlydaysisthatitwidelyuseselectronicdesignautomationtools.Designerscanfocusmostoftheirenergyonthehardwaredescriptionlanguageexpressionofcircuitlogicfunctions,whilefunctionalverification,logicsimulation,logicsynthesis,layout,routing,Thelayout,etc.canbecompletedwithcomputerassistance.
Insufficient
Duetothecontinuousexpansionoftechnologyandtheincreasingcomplexityofmicroprocessors,microprocessordesignershaveencounteredseveralchallenges.
1Powerconsumptionandheatdissipation:Asthescaleofcomponentintegrationincreases,theheatpowerperunitvolumeisgraduallyincreasing,buttheheatdissipationareaofthedeviceremainsunchanged,causingtheheatdissipationperunitareatofailtomeettherequirements.Atthesametime,thestaticpowerconsumptioncausedbytheweaksub-thresholdcurrentofasingletransistorhasbecomeincreasinglysignificantduetothesubstantialincreaseinthenumberoftransistors.Somelow-powerdesigntechniqueshavebeenproposed,suchasdynamicvoltageandfrequencyscaling(DVFS),toreducethetotalpowerdissipation.
2Processdeviation:Asphotolithographytechnologyislimitedbyopticallaws,higherprecisiondopingandetchingwillbecomemoredifficult,andthepossibilityoferrorwillincrease.Thedesignermustcarryouttechnicalsimulationbeforechipmanufacturing.
3Morestringentdesignrules:Duetotheproblemsofphotolithographyandetchingprocesses,thedesignrulesforintegratedcircuitlayoutmustbestricter.Whendesigningthelayout,thedesignermustalwaysconsidertheserules.Thetotalcostofcustomdesignhasreachedacriticalpoint,andmanydesignagenciestendtostartwithelectronicdesignautomationtoachieveautomaticdesign.
4Designclosure:Astheclockfrequencyofdigitalelectronicapplicationstendstorise,designersfinditmoredifficulttomaintainlowclockskewontheentirechip.Thissparkedinterestinmulti-core,multi-processorarchitectures(seeAmdahl'sLaw).
5Cost:Asthesizeofthecrystalgrainshrinks,thesizeofthewaferbecomeslarger,andthenumberofcrystalgrainsperwaferareaincreases,sothecomplexityofthephotomaskusedinthemanufacturingprocessincreasessharply.Modernhigh-precisionphotomasktechnologyisveryexpensive.
Manufacturer
"Ultra-largescale"hasbeensaidmanyyearsago.Themostadvancedmanufacturingprocesshasreachedtheorderof7nanometers,andtheactualmassproductionprocessesaremostlyat14and22nanometers.Sortedbysales,thetopthreecompaniesare:Intel(U.S.),Samsung(SouthKorea),andTSMC(Taiwan).MostothercompaniesareEuropean,American,JapaneseandTaiwanesecompanies.OnlySMICinmainlandChinacankeepupwiththetrendoftechnologicaldevelopment.