is generally a metal-oxide-semiconductor field effect transistor, or metal-insulator-semiconductor. G: gate; S: source; D: drain. The source (source) and drain (depletion layer) of the MOS tube can be reversed, and they are both N-type regions formed in the P-type backgate. In most cases, these two areas are the same, even if the two ends are reversed, it will not affect the performance of the device. Such devices are considered symmetrical.
Field effect tubes are divided into PMOS tubes and NMOS tubes, which belong to insulated gate field effect tubes.
